DocumentCode
3293118
Title
Investigation of the vertical IMOS-transistor by device simulation
Author
Kraus, Rainer ; Jungemann, Christoph
Author_Institution
EIT4, Bundeswehr Univ., Neubiberg
fYear
2009
fDate
18-20 March 2009
Firstpage
281
Lastpage
284
Abstract
The characteristics of vertical IMOS transistors are investigated with the help of 2D device simulations. The obtained results show the influence of different device parameters like doping concentration, charge carrier lifetime, and size of the floating body. Furthermore the static and dynamic switching behaviour is presented.
Keywords
MOSFET; carrier lifetime; semiconductor device models; semiconductor doping; 2D device simulation; charge carrier lifetime; doping concentration; dynamic switching behaviour; floating body size; static switching behaviour; vertical IMOS-transistor; Charge carrier lifetime; Circuit simulation; Doping; Dynamic voltage scaling; Electrons; Impact ionization; Leakage current; MOSFETs; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location
Aachen
Print_ISBN
978-1-4244-3704-7
Type
conf
DOI
10.1109/ULIS.2009.4897591
Filename
4897591
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