• DocumentCode
    3293160
  • Title

    Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide

  • Author

    Werner, M. ; Zhao, C.Z. ; Taylor, S. ; Chalker, P.R. ; Black, K. ; Gaskell, J.

  • Author_Institution
    Dept. of Eng., Univ. of Liverpool, Liverpool, UK
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    625
  • Lastpage
    627
  • Abstract
    The frequency dispersion of La doped zirconia and cerium doped hafnia films is considered. Doping at concentration of approximately 10% stabilizes crystalline phases with higher-k values. The dielectric relaxation of La doped zirconia films is more severe than the cerium doped hafnia.
  • Keywords
    cerium compounds; dielectric relaxation; doping; hafnium compounds; lanthanum compounds; permittivity; thin films; zirconium compounds; CeHfO2; LaZrO2; crystalline phase; dielectric relaxation; doping; frequency dispersion; permittivity enhancement; Annealing; Atomic force microscopy; Capacitance-voltage characteristics; Cerium; Dielectrics; Doping; Frequency measurement; Hafnium; Permittivity; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232568
  • Filename
    5232568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3293160