• DocumentCode
    3293175
  • Title

    Growth characteristics of carbon nanotubes by DC-PCVD

  • Author

    Qi, Hai-dong ; Liu, Hong-bo ; Wang, Li-zhong ; Huang, Tao

  • Author_Institution
    Coll. of Inf. & Technol., Jilin Normal Univ., Siping, China
  • fYear
    2011
  • fDate
    15-17 April 2011
  • Firstpage
    2217
  • Lastpage
    2220
  • Abstract
    The methods and the device of carbon nanotubes which are were prepared by DC -PCVD are described in the paper. The growth characteristics of carbon nanotubes is researched within the substrate temperature from 500°C to 900°C when the range of gas is from 60 torr to 90 torr. It is appropriate when the temperature is 700°C and the pressure is 75torr. The growth characteristics of carbon nanotubes also research when the concentration of CH4 ranges from 8% to 20% . The diameters of carbon nanotubes are uniform relatively if the concentration of CH4 is low. While the diameters are not uniform if the concentration is high.
  • Keywords
    carbon nanotubes; plasma CVD; DC-PCVD; carbon nanotubes; growth characteristics; pressure 60 torr to 90 torr; temperature 500 degC to 900 degC; Carbon; Carbon nanotubes; Cathodes; Nickel; Plasma temperature; Substrates; Temperature; DC-PCVD; carbon nanotubes; growth characteristics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Information and Control Engineering (ICEICE), 2011 International Conference on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-8036-4
  • Type

    conf

  • DOI
    10.1109/ICEICE.2011.5778313
  • Filename
    5778313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3293175