Title :
Growth characteristics of carbon nanotubes by DC-PCVD
Author :
Qi, Hai-dong ; Liu, Hong-bo ; Wang, Li-zhong ; Huang, Tao
Author_Institution :
Coll. of Inf. & Technol., Jilin Normal Univ., Siping, China
Abstract :
The methods and the device of carbon nanotubes which are were prepared by DC -PCVD are described in the paper. The growth characteristics of carbon nanotubes is researched within the substrate temperature from 500°C to 900°C when the range of gas is from 60 torr to 90 torr. It is appropriate when the temperature is 700°C and the pressure is 75torr. The growth characteristics of carbon nanotubes also research when the concentration of CH4 ranges from 8% to 20% . The diameters of carbon nanotubes are uniform relatively if the concentration of CH4 is low. While the diameters are not uniform if the concentration is high.
Keywords :
carbon nanotubes; plasma CVD; DC-PCVD; carbon nanotubes; growth characteristics; pressure 60 torr to 90 torr; temperature 500 degC to 900 degC; Carbon; Carbon nanotubes; Cathodes; Nickel; Plasma temperature; Substrates; Temperature; DC-PCVD; carbon nanotubes; growth characteristics;
Conference_Titel :
Electric Information and Control Engineering (ICEICE), 2011 International Conference on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-8036-4
DOI :
10.1109/ICEICE.2011.5778313
