• DocumentCode
    3293176
  • Title

    Hot electron reliability and ESD latent damage

  • Author

    Aur, S. ; Chatterjee, Avhishek ; Polgreen, T.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1988
  • fDate
    12-14 Apr 1988
  • Firstpage
    15
  • Lastpage
    18
  • Abstract
    The authors present a study of the impact of noncatastrophic electrostatic-discharge (ESD) stress on hot-electron reliability as well as the effect of hot electron (HE) injection on ESD protection threshold. It is found that there is a factor of two to four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar in that HE is a low-current long-time process and ESD is a high-current short-time process. Therefore the techniques for characterizing hot-electron degradation have been applied to quantify damage due to ESD stress. This technique shows electrical evidence of current filaments during an ESD
  • Keywords
    discharges (electric); electrostatics; hot carriers; insulated gate field effect transistors; reliability; semiconductor device testing; ESD latent damage; ESD protection threshold; NMOS transistors; current filaments; electrostatic discharge stress; hot-electron degradation; hot-electron reliability; Charge pumps; Current measurement; Degradation; Electric breakdown; Electrons; Electrostatic discharge; Helium; MOSFET circuits; Protection; Pulse measurements; Space vector pulse width modulation; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium 1988. 26th Annual Proceedings., International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/RELPHY.1988.23418
  • Filename
    23418