Title :
Low temperature reactive ion etching of silicon with SF6/O2 plasmas
Author :
Wells, T. ; El-Gomati, M.M. ; Wood, J. ; Johnson, S.
Author_Institution :
Dept. of Electron., York Univ., UK
Abstract :
An investigation of low temperature reactive ion etching of silicon to produce ultra small structures is presented. Plasmas containing SF6/O2 were used to etch silicon samples in the temperature range +25°C to -140°C. At low flow rates and temperatures the etching produces nearly anisotropic etching in agreement with predictions of the reactive spot model. At higher flow rates etching produced facetted features indicating higher chemical reactivity of the plasma with the silicon
Keywords :
elemental semiconductors; nanotechnology; silicon; sputter etching; -140 to 25 C; O2; SF6; SF6-O2; SF6/O2 plasmas; Si; anisotropic etching; facetted features; flow rates; low temperature RIE; reactive ion etching; reactive spot model; ultra small structures; vacuum microelectronic devices; Chemicals; Cooling; Electrodes; Etching; Plasma applications; Plasma chemistry; Plasma temperature; Silicon; Surface morphology; Temperature control;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601839
