Title :
New approach: Sample preparation methodology for P-V metal void inspection
Author :
Chou, Po Fu ; Lin, Ru Yu ; Chen, Tung-Hung
Author_Institution :
United Microelectron. Corp., Ltd., Hsinchu, Taiwan
Abstract :
The metal void information is very important for engineers to monitor the stability of the process and equipment during mass production and process tuning. However, traditional methods (X-S and P-V) are not efficient for metal void inspection. Therefore, the novel methodology is developed in this paper to provide a time efficient sample preparation method and acceptable view region for plane-view metal void inspection instead of traditional methodology. This new approach involves the bevel polish technique and metal void inspection procedure. Thus the sample will be efficiently polished on a small slope and each layer could be inspected in the SEM simultaneously. By using this methodology can create a large inspection area for metal voids and dramatically reduce the cycle time of metal void inspection procedure to help engineers quickly get accurate metal void information.
Keywords :
inspection; metals; polishing; scanning electron microscopy; specimen preparation; voids (solid); P-V metal void inspection; SEM; bevel polish technique; mass production; plane-view metal void inspection; process tuning; sample preparation; Costs; Dry etching; Electronics industry; Inspection; Mass production; Microelectronics; Monitoring; Passivation; Random access memory; Stability;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232571