DocumentCode
3293216
Title
New approach: Sample preparation methodology for P-V metal void inspection
Author
Chou, Po Fu ; Lin, Ru Yu ; Chen, Tung-Hung
Author_Institution
United Microelectron. Corp., Ltd., Hsinchu, Taiwan
fYear
2009
fDate
6-10 July 2009
Firstpage
608
Lastpage
611
Abstract
The metal void information is very important for engineers to monitor the stability of the process and equipment during mass production and process tuning. However, traditional methods (X-S and P-V) are not efficient for metal void inspection. Therefore, the novel methodology is developed in this paper to provide a time efficient sample preparation method and acceptable view region for plane-view metal void inspection instead of traditional methodology. This new approach involves the bevel polish technique and metal void inspection procedure. Thus the sample will be efficiently polished on a small slope and each layer could be inspected in the SEM simultaneously. By using this methodology can create a large inspection area for metal voids and dramatically reduce the cycle time of metal void inspection procedure to help engineers quickly get accurate metal void information.
Keywords
inspection; metals; polishing; scanning electron microscopy; specimen preparation; voids (solid); P-V metal void inspection; SEM; bevel polish technique; mass production; plane-view metal void inspection; process tuning; sample preparation; Costs; Dry etching; Electronics industry; Inspection; Mass production; Microelectronics; Monitoring; Passivation; Random access memory; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232571
Filename
5232571
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