DocumentCode :
3293268
Title :
Effect of multiple via structure on upstream electromigration in copper interconnect
Author :
Lin, Mingte ; Jou, Nick ; Liang, James W. ; Juan, Alex ; Su, K.C.
Author_Institution :
United Microelectron. Corp., Hsinchu, Taiwan
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
603
Lastpage :
607
Abstract :
Upstream electromigration (EM) was studied on different multiple via structures. Better EM performance of structure with more via was observed. Via layout affects the current density distribution and resistance change under EM stress. Failure analysis showed different EM failure modes in these structures. EM performances were demonstrated to be dependent on current density and Cu diffusion pattern.
Keywords :
copper; electromigration; failure analysis; integrated circuit interconnections; EM stress; copper interconnect; current density distribution; failure analysis; layout affects; resistance change; upstream electromigration; Copper; Current density; Electromigration; Electrons; Equations; Failure analysis; Integrated circuit interconnections; Stress; Temperature; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232574
Filename :
5232574
Link To Document :
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