Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition

Author

Zhou Tao ; Hongxia, Liu ; Qianwei, Kuang ; Naiqiong, Cai ; Yue, Hao ; Aaron, Z. ; Sai, Tallavarjula

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2009

fDate

6-10 July 2009

Firstpage

592

Lastpage

595

Abstract

The ultra-thin HfO₂/SiO₂ gate stack high-k dielectrics were deposited by atomic layer deposition. The physical and structural properties of the HfO₂/SiO₂ films were investigated. Atomic force microscopy, transmission electron microscopy and X-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO₂/SiO₂ gate stack dielectrics with good performance.

Keywords

X-ray reflection; atomic force microscopy; hafnium compounds; high-k dielectric thin films; reflectivity; silicon compounds; transmission electron microscopy; HfO2/SiO2 gate stack high-k dielectrics; HfO₂-SiO₂; X-ray reflectivity analysis; atomic force microscopy; atomic layer deposition; physical properties; structural properties; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Optical films; Reflectivity; Silicon; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232575

Filename

5232575