DocumentCode :
3293293
Title :
Physical and structural properties of HfO2/SiO2 gate stack high-k dielectrics deposited by atomic layer deposition
Author :
Zhou Tao ; Hongxia, Liu ; Qianwei, Kuang ; Naiqiong, Cai ; Yue, Hao ; Aaron, Z. ; Sai, Tallavarjula
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
592
Lastpage :
595
Abstract :
The ultra-thin HfO2/SiO2 gate stack high-k dielectrics were deposited by atomic layer deposition. The physical and structural properties of the HfO2/SiO2 films were investigated. Atomic force microscopy, transmission electron microscopy and X-ray reflectivity analysis results indicate that the atomic layer deposition can deposit HfO2/SiO2 gate stack dielectrics with good performance.
Keywords :
X-ray reflection; atomic force microscopy; hafnium compounds; high-k dielectric thin films; reflectivity; silicon compounds; transmission electron microscopy; HfO2/SiO2 gate stack high-k dielectrics; HfO2-SiO2; X-ray reflectivity analysis; atomic force microscopy; atomic layer deposition; physical properties; structural properties; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Optical films; Reflectivity; Silicon; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232575
Filename :
5232575
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3293293
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