Title :
Emission characteristics of silicon field emitter arrays fabricated by spin-on-glass etch-back process
Author :
Lee, Jin Ho ; Kang, Sung Weon ; Yu, Byoung Gon ; Cho, Kyoung Ik ; Yoo, Hyung Joun
Author_Institution :
Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
The fabrication process and emission characteristics of silicon field emitter arrays (FEAs) for flat panel display are described. FEAs have been fabricated by a novel method which consists of two-step tip etch and spin-on-glass (SOG) etch-back processes using double layered thermal/tetraethylorthosilicate (TEOS) oxides as a gate dielectric. A small gate aperture with low gate leakage current could be fabricated with the process. The anode emission current measured from the 1024 tips array was about 300 μA (292 nA/tip) at a gate voltage of 70 V and the turn-on voltage was 49 V
Keywords :
electron field emission; elemental semiconductors; etching; flat panel displays; leakage currents; silicon; vacuum microelectronics; 300 muA; 49 V; 70 V; Si; anode emission current; double layered thermal/tetraethylorthosilicate oxides; emission characteristics; fabrication process; field emitter arrays; flat panel display; gate aperture; gate dielectric; gate voltage; leakage current; spin-on-glass etch-back process; turn-on voltage; two-step tip etch; Anodes; Apertures; Dielectrics; Etching; Fabrication; Field emitter arrays; Flat panel displays; Leakage current; Silicon; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601846
