Fabrication of volcano emitters using chemical mechanical polishing (CMP)

Author

Busta, H. ; Gammie, G. ; Skala, S. ; Fury, M. ; Stell, M. ; Myers, T.

Author_Institution

Coloray Display Corp., Fremont, CA, USA

fYear

1996

fDate

7-12 Jul 1996

Firstpage

388

Lastpage

392

Abstract

Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 μm have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 μm spacings between the emitter rims and the silicon gates. The gate post heights ranged from 4 to 6 μm. Measurements of single volcano SiC and SiC/TiW/Au emitters showed that the emission current scales with the periphery of the devices. CMP offers a readily scaleable process for the manufacturing of large area FEDs

Keywords

electron field emission; large screen displays; polishing; vacuum microelectronics; 4 to 6 micron; 6 to 50 micron; Cr; SiC; SiC-TiW-Au; TiW-Au; chemical mechanical polishing; emission current; emitter material; emitter rims; gate dimensions; gate plateau; gate post heights; gate-to-emitter dielectric; large area FEDs; volcano emitters; Chemical processes; Chromium; Current measurement; Dielectric materials; Dielectric measurements; Fabrication; Gold; Manufacturing processes; Silicon carbide; Volcanoes;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601848

Filename

601848