Title :
Fabrication of volcano emitters using chemical mechanical polishing (CMP)
Author :
Busta, H. ; Gammie, G. ; Skala, S. ; Fury, M. ; Stell, M. ; Myers, T.
Author_Institution :
Coloray Display Corp., Fremont, CA, USA
Abstract :
Volcano emitters with gate dimensions of 6, 9, 15, 25, and 50 μm have been processed using chemical mechanical polishing (CMP) for the removal of the emitter material and the gate-to-emitter dielectric on top of the gate plateau. Devices were fabricated with Cr, Cr-cermet, TiW/Au, SiC, and SiC/TiW/Au as the emitter materials and with 1 μm spacings between the emitter rims and the silicon gates. The gate post heights ranged from 4 to 6 μm. Measurements of single volcano SiC and SiC/TiW/Au emitters showed that the emission current scales with the periphery of the devices. CMP offers a readily scaleable process for the manufacturing of large area FEDs
Keywords :
electron field emission; large screen displays; polishing; vacuum microelectronics; 4 to 6 micron; 6 to 50 micron; Cr; SiC; SiC-TiW-Au; TiW-Au; chemical mechanical polishing; emission current; emitter material; emitter rims; gate dimensions; gate plateau; gate post heights; gate-to-emitter dielectric; large area FEDs; volcano emitters; Chemical processes; Chromium; Current measurement; Dielectric materials; Dielectric measurements; Fabrication; Gold; Manufacturing processes; Silicon carbide; Volcanoes;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601848
