DocumentCode
3293395
Title
Gate CD Control Considering Variation of Gate and STI Structure
Author
Kurihara, Masaru ; Tanaka, Jun´ichi ; Izawa, Masaru ; Kawai, Kenji ; Fujiwara, Nobuo
Author_Institution
Hitachi Ltd., Tokyo
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
95
Lastpage
98
Abstract
We have developed a fab-wide APC system to control critical dimension (CD) of gate electrode length. We have also developed a model equation to predict gate CD by considering the structures of gate electrode and STI. This prediction model was also used to do factor analysis of gate CD variation. Effectiveness of the prediction model for feedforward control was evaluated by both simulation and experiment.
Keywords
feedforward; isolation technology; process control; STI structure; advanced process control; critical dimension control; fab-wide APC system; factor analysis; feedforward control; gate CD control; prediction model; shallow trench isolation structures; Control systems; Electrodes; Equations; Etching; Fluctuations; Inspection; Length measurement; Lithography; Predictive models; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493032
Filename
4493032
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