Title :
Gate CD Control Considering Variation of Gate and STI Structure
Author :
Kurihara, Masaru ; Tanaka, Jun´ichi ; Izawa, Masaru ; Kawai, Kenji ; Fujiwara, Nobuo
Author_Institution :
Hitachi Ltd., Tokyo
Abstract :
We have developed a fab-wide APC system to control critical dimension (CD) of gate electrode length. We have also developed a model equation to predict gate CD by considering the structures of gate electrode and STI. This prediction model was also used to do factor analysis of gate CD variation. Effectiveness of the prediction model for feedforward control was evaluated by both simulation and experiment.
Keywords :
feedforward; isolation technology; process control; STI structure; advanced process control; critical dimension control; fab-wide APC system; factor analysis; feedforward control; gate CD control; prediction model; shallow trench isolation structures; Control systems; Electrodes; Equations; Etching; Fluctuations; Inspection; Length measurement; Lithography; Predictive models; Semiconductor device modeling;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493032
