Title :
Simultaneous regulation of film thickness, surface roughness and porosity in a multiscale thin film growth process
Author :
Hu, Gangshi ; Zhang, Xinyu ; Orkoulas, Gerassimos ; Christofides, Panagiotis D.
Author_Institution :
Dept. of Chem. & Biomol. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
This work focuses on simultaneous regulation of film thickness, surface roughness and porosity in a multiscale model of a thin film growth process using the inlet precursor concentration as the manipulated input. Specifically, a continuous macroscopic partial differential equation model is used to describe the dynamics of the gas phase. The thin film growth process is modeled via a microscopic kinetic Monte Carlo simulation model on a triangular lattice with vacancies and overhangs allowed to develop inside the film. Closed-form dynamic models of thin film surface profile and porosity are developed and used as the basis for the design of a model predictive control algorithm to simultaneously regulate film thickness, surface roughness and film porosity. Simulation results demonstrate the applicability and effectiveness of the proposed modeling and control approach by applying the proposed controller to the multiscale model.
Keywords :
Monte Carlo methods; elemental semiconductors; partial differential equations; porosity; porous materials; semiconductor growth; semiconductor thin films; silicon; surface roughness; vacancies (crystal); Si; closed-form dynamic models; continuous macroscopic partial differential equation model; controller; film thickness; gas phase; inlet precursor concentration; microscopic kinetic Monte Carlo simulation model; multiscale thin film growth process; porosity; surface roughness; thin film surface profile; triangular lattice; vacancies; Algorithm design and analysis; Kinetic theory; Lattices; Microscopy; Partial differential equations; Predictive control; Predictive models; Rough surfaces; Surface roughness; Transistors;
Conference_Titel :
Decision and Control, 2009 held jointly with the 2009 28th Chinese Control Conference. CDC/CCC 2009. Proceedings of the 48th IEEE Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3871-6
Electronic_ISBN :
0191-2216
DOI :
10.1109/CDC.2009.5399542