• DocumentCode
    3293431
  • Title

    Development of monitoring technology of ion implanter for particle detection

  • Author

    Yasuda, Satoshi ; Imai, Shin-ichi

  • Author_Institution
    Matsushita Electr. Ind. Co., Ltd., Uozu
  • fYear
    2006
  • fDate
    25-27 Sept. 2006
  • Firstpage
    106
  • Lastpage
    109
  • Abstract
    This paper describes the development of monitoring technology in an ion implanter to determine a root cause of particle generation. It is demonstrated that an in-situ particle counter is not so useful in the region of a few numbers of particles. By analyzing equipment parameter data like an ion beam centroid, an electrode position and a magnetic flux density at a mass analyzer using equipment monitoring, it is cleared that ion beam trajectories between two ion implanters are different. Finally, by adjusting the ion beam trajectory in the ion implanter, it is confirmed that the number of particles can be reduced and the maintenance cycle becomes about 3.5 times longer before adjusting the ion beam trajectory.
  • Keywords
    computerised monitoring; ion implantation; magnetic flux; mass spectrometer accessories; particle detectors; semiconductor device measurement; semiconductor device packaging; electrode position; equipment monitoring; ion beam centroid; ion beam trajectory; ion implanter monitoring technology; magnetic flux density; mass analyzer; particle detection; particle generation; Computerized monitoring; Condition monitoring; Counting circuits; Electrodes; Ion beams; Ion sources; Magnetic analysis; Particle measurements; Plasma immersion ion implantation; Toy manufacturing industry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-4-9904138-0-4
  • Type

    conf

  • DOI
    10.1109/ISSM.2006.4493035
  • Filename
    4493035