DocumentCode
3293431
Title
Development of monitoring technology of ion implanter for particle detection
Author
Yasuda, Satoshi ; Imai, Shin-ichi
Author_Institution
Matsushita Electr. Ind. Co., Ltd., Uozu
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
106
Lastpage
109
Abstract
This paper describes the development of monitoring technology in an ion implanter to determine a root cause of particle generation. It is demonstrated that an in-situ particle counter is not so useful in the region of a few numbers of particles. By analyzing equipment parameter data like an ion beam centroid, an electrode position and a magnetic flux density at a mass analyzer using equipment monitoring, it is cleared that ion beam trajectories between two ion implanters are different. Finally, by adjusting the ion beam trajectory in the ion implanter, it is confirmed that the number of particles can be reduced and the maintenance cycle becomes about 3.5 times longer before adjusting the ion beam trajectory.
Keywords
computerised monitoring; ion implantation; magnetic flux; mass spectrometer accessories; particle detectors; semiconductor device measurement; semiconductor device packaging; electrode position; equipment monitoring; ion beam centroid; ion beam trajectory; ion implanter monitoring technology; magnetic flux density; mass analyzer; particle detection; particle generation; Computerized monitoring; Condition monitoring; Counting circuits; Electrodes; Ion beams; Ion sources; Magnetic analysis; Particle measurements; Plasma immersion ion implantation; Toy manufacturing industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493035
Filename
4493035
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