A new fabrication method of silicon field emitter array with local oxidation of polysilicon and chemical-mechanical-polishing

In this paper, we describe the fabrication of single crystal silicon field emitter arrays. Emission tips have been fabricated by a novel method which uses chemical-mechanical-polishing (CMP) and local polysilicon oxidation for gate electrodes and gate dielectrics, respectively. By this method, we can shrink the radius of gate aperture without increasing gate leakage current, and get a clean cut edge of gate electrode. The anode emission current measured from the 1024 tips array was about 17 μA (16 nA/tip) at a gate voltage of 64 V