Title :
Controlling the growth of VOx films for various optoelectronic applications
Author :
Wang, Xiaomei ; Xu, Xiangdong ; Wu, Zhiming ; Jiang, Yadong ; He, Shaowei
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, vanadium oxide (VOx) thin films were prepared by reactive DC magnetron sputtering under different deposition temperatures. The physical properties and microstructures of VOx thin films were systematically investigated. Results reveal that when the deposition temperature is varied from 200degC to 390degC, the square resistance of VOx at room temperature is decreased significantly from 696 KOmega/sq to 0.122 KOmega/sq. The film stress and optical properties were also observed to be varied with the deposition temperature. The resulting adjustment of physical properties is attributed to the difference in both chemical states and crystallinity of VOx. On the base of the special optical, electrical and mechanical properties, the as-prepared VOx films exhibit great potential in various optoelectronic applications.
Keywords :
optoelectronic devices; sputter deposition; vanadium compounds; VO; chemical states; film stress; optoelectronic devices; reactive DC magnetron sputtering; temperature 200 degC to 390 degC; temperature 293 K to 298 K; Chemicals; Electrical resistance measurement; Infrared detectors; Magnetic flux; Optical films; Optical modulation; Optical sensors; Sputtering; Substrates; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232582