• DocumentCode
    3293442
  • Title

    Controlling the growth of VOx films for various optoelectronic applications

  • Author

    Wang, Xiaomei ; Xu, Xiangdong ; Wu, Zhiming ; Jiang, Yadong ; He, Shaowei

  • Author_Institution
    State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    572
  • Lastpage
    576
  • Abstract
    In this paper, vanadium oxide (VOx) thin films were prepared by reactive DC magnetron sputtering under different deposition temperatures. The physical properties and microstructures of VOx thin films were systematically investigated. Results reveal that when the deposition temperature is varied from 200degC to 390degC, the square resistance of VOx at room temperature is decreased significantly from 696 KOmega/sq to 0.122 KOmega/sq. The film stress and optical properties were also observed to be varied with the deposition temperature. The resulting adjustment of physical properties is attributed to the difference in both chemical states and crystallinity of VOx. On the base of the special optical, electrical and mechanical properties, the as-prepared VOx films exhibit great potential in various optoelectronic applications.
  • Keywords
    optoelectronic devices; sputter deposition; vanadium compounds; VO; chemical states; film stress; optoelectronic devices; reactive DC magnetron sputtering; temperature 200 degC to 390 degC; temperature 293 K to 298 K; Chemicals; Electrical resistance measurement; Infrared detectors; Magnetic flux; Optical films; Optical modulation; Optical sensors; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232582
  • Filename
    5232582