DocumentCode
3293442
Title
Controlling the growth of VOx films for various optoelectronic applications
Author
Wang, Xiaomei ; Xu, Xiangdong ; Wu, Zhiming ; Jiang, Yadong ; He, Shaowei
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2009
fDate
6-10 July 2009
Firstpage
572
Lastpage
576
Abstract
In this paper, vanadium oxide (VOx) thin films were prepared by reactive DC magnetron sputtering under different deposition temperatures. The physical properties and microstructures of VOx thin films were systematically investigated. Results reveal that when the deposition temperature is varied from 200degC to 390degC, the square resistance of VOx at room temperature is decreased significantly from 696 KOmega/sq to 0.122 KOmega/sq. The film stress and optical properties were also observed to be varied with the deposition temperature. The resulting adjustment of physical properties is attributed to the difference in both chemical states and crystallinity of VOx. On the base of the special optical, electrical and mechanical properties, the as-prepared VOx films exhibit great potential in various optoelectronic applications.
Keywords
optoelectronic devices; sputter deposition; vanadium compounds; VO; chemical states; film stress; optoelectronic devices; reactive DC magnetron sputtering; temperature 200 degC to 390 degC; temperature 293 K to 298 K; Chemicals; Electrical resistance measurement; Infrared detectors; Magnetic flux; Optical films; Optical modulation; Optical sensors; Sputtering; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232582
Filename
5232582
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