DocumentCode
3293449
Title
Device-level APC in Ion Implantation for Analog Device
Author
Kyuho, Takashi ; Tsukihara, Tetsuya ; Wang, Qianyi ; Yamaoka, Masahiro ; Motosue, Takafumi ; Kimura, Koji
Author_Institution
Toshiba Corp., Kitakyushu
fYear
2006
fDate
25-27 Sept. 2006
Firstpage
110
Lastpage
113
Abstract
With the aim of achieving high accuracy for analog devices, we developed an advanced process control (APC) system for poly silicon resistance control in implantation steps. The effect of this system has been successfully demonstrated in our mass production. Moreover LP-CVD equipment for poly silicon deposition was enhanced with EES. This can improve the equipment fault detection ability for stabilizing this APC system.
Keywords
fault diagnosis; ion implantation; process control; advanced process control; analog device; device-level APC; equipment fault detection ability; ion implantation; mass production; polysilicon resistance control; Bonding; Contact resistance; Control systems; Grain boundaries; Grain size; Ion implantation; Resistors; Semiconductor films; Silicon; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-4-9904138-0-4
Type
conf
DOI
10.1109/ISSM.2006.4493036
Filename
4493036
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