Title :
Fabrication and characterization of gated n+ polycrystalline silicon field emitter arrays
Author :
Uh, Hyung Soo ; Kwon, Sang Jik ; Lee, Jong Duk ; Park, Hen Suh
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
Abstract :
Field emission characteristics from n+ polycrystalline silicon (poly-Si) field emitters fabricated on an insulating layer are presented and compared with those from single crystal silicon field emitters. SEM micrographs of fabricated poly-Si emitters showed poor uniformity in structure due to the oxide thickness deviation associated with grain boundaries of poly-Si in sharpening oxidation step. The anode current of 0.1 μA/tip was measured at the gate bias of 82 V from 625 poly-Si tips with gate hole diameter of 1.2 μm and 80 V from 625 single crystal Si tips with diameter of 1.6 μm, respectively
Keywords :
electron field emission; elemental semiconductors; grain boundaries; oxidation; silicon; vacuum microelectronics; 1.2 micron; 82 V; Si field emitter arrays; Si-SiO2; characterization; fabrication; field emission characteristics; gated n+ polycrystalline Si FEA; grain boundaries; insulating layer; oxide thickness deviation; poly-Si field emitters; polysilicon field emitters; sharpening oxidation step; Anodes; Cathodes; Displays; Electrodes; Fabrication; Field emitter arrays; Grain boundaries; Insulation; Oxidation; Silicon;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601855
