Title :
High density nonvolatile magnetoresistive RAM
Author :
Tehrani, S. ; Chen, E. ; Durlam, M. ; Zhu, T. ; Goronkin, H.
Author_Institution :
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
Abstract :
Non-volatile memory cells based on ferromagnetically coupled giant magneto-resistive (GMR) material were patterned into submicron feature sizes. Switching characteristics of such cells allow for bipolar signal reading which is twice the intrinsic magnetoresistance change of the material. Excellent thermal stability is reported for deep submicron memory cells.
Keywords :
cellular arrays; giant magnetoresistance; magnetic film stores; magnetoresistive devices; random-access storage; bipolar signal reading; deep submicron memory cells; ferromagnetically coupled giant magneto-resistive material; nonvolatile magnetoresistive RAM; submicron feature sizes; switching characteristics; thermal stability; Giant magnetoresistance; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic separation; Magnetic switching; Nonvolatile memory; Perpendicular magnetic anisotropy; Read-write memory; Saturation magnetization;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553152
