DocumentCode
3293472
Title
High density nonvolatile magnetoresistive RAM
Author
Tehrani, S. ; Chen, E. ; Durlam, M. ; Zhu, T. ; Goronkin, H.
Author_Institution
Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
193
Lastpage
196
Abstract
Non-volatile memory cells based on ferromagnetically coupled giant magneto-resistive (GMR) material were patterned into submicron feature sizes. Switching characteristics of such cells allow for bipolar signal reading which is twice the intrinsic magnetoresistance change of the material. Excellent thermal stability is reported for deep submicron memory cells.
Keywords
cellular arrays; giant magnetoresistance; magnetic film stores; magnetoresistive devices; random-access storage; bipolar signal reading; deep submicron memory cells; ferromagnetically coupled giant magneto-resistive material; nonvolatile magnetoresistive RAM; submicron feature sizes; switching characteristics; thermal stability; Giant magnetoresistance; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic separation; Magnetic switching; Nonvolatile memory; Perpendicular magnetic anisotropy; Read-write memory; Saturation magnetization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.553152
Filename
553152
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