Title :
Advanced CD Control Technology for 65-nm Node Dual Damascene Process
Author :
Nagase, M. ; Maruyama, T. ; Iguchi, M. ; Suzuki, M. ; Tominaga, M. ; Sekine, M.
Author_Institution :
NEC Electron. Corp., Sagamihara
Abstract :
This paper describes an advanced CD control technology for 65-nm node dual damascene process and beyond. Our newly developed DESE (deposition enhanced shrink etching) technology realizes not only dynamic via shrink ranged 40nm but also accurate trench CD control by feed-forward technology. This technology has been performed for 65-nm Cu/Low-k interconnects using porous CVD SiOC.
Keywords :
chemical vapour deposition; etching; integrated circuit interconnections; low-k dielectric thin films; porous materials; CD control technology; Cu/Low-k interconnects; deposition enhanced shrink etching technology; dual damascene process; feedforward technology; porous CVD; Costs; Dynamic range; Etching; Feedforward systems; Lithography; National electric code; Plasma applications; Plasma measurements; Process control; Resists;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493044
