About a change of the threshold voltage at nanostructure formation in the scanning tunneling microscope

Author

Vladimirov, G.G. ; Drozdov, A.V. ; Rezanov, A.N.

Author_Institution

Dept. of Phys., St. Petersburg State Univ., Russia

fYear

1996

fDate

7-12 Jul 1996

Firstpage

453

Lastpage

457

Abstract

It is shown that the process of nanostructure formation is determined in many respects by parameters of the electrical circuit used in the STM . The hills formation probability from the applying voltage pulse U_pulse for various quantities of an impedance of the preliminary amplifier (PA) and for various quantities of additional resistor R_x is investigated. A change of the impedance PA is carried out by the additional capacity C_x. This capacitor shunts an entering impedance PA. Connection C_x results in a change of a threshold voltage U_th of nanostructure formation. The threshold voltage decreases with a reduction of an entering impedance (increase C_x). Such behaviour of U_th argues for the mechanism of thermal expansion tip

Keywords

nanotechnology; scanning tunnelling microscopy; surface treatment; thermal expansion; electrical circuit; entering impedance; hills formation probability; nanostructure formation; preliminary amplifier; scanning tunneling microscope; thermal expansion tip; threshold voltage; Circuits; Gold; Impedance; Microscopy; Physics; Pulse amplifiers; Surface morphology; Thermal expansion; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601863

Filename

601863