Title :
Atomically sharp features grown by silicon molecular beam epitaxy
Author :
Hobart, K.D. ; Twigg, M.E. ; Gray, H.F. ; Shaw, J.L. ; Thompson, P.E. ; Kub, F.J. ; Park, D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We report the first observation of atomically sharp Si tips grown by molecular beam epitaxy. The tips were grown on prepatterned substrates containing ~100 nm diameter high-aspect ratio Si pillars. Under proper growth conditions, self-organized faceting occurs and a combination of {111} and {113} planes forms a well defined apex. High resolution transmission electron microscopy has revealed that the apex is a few lattice spacings across. The evolution of the faceted nanostructures was quantified by depositing Ge marker layers during the growth process
Keywords :
electron field emission; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscopy; vacuum microelectronics; 100 nm; Si; aspect ratio; atomically sharp features; lattice spacings; marker layers; molecular beam epitaxy; prepatterned substrates; self-organized faceting; transmission electron microscopy; Atomic beams; Atomic layer deposition; Epitaxial growth; Lattices; Molecular beam epitaxial growth; Nanostructures; Scanning electron microscopy; Silicon; Substrates; Transmission electron microscopy;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601865
