Title :
Impact on Latchup Immunity due to the Switch From Epitaxial to Bulk Substrate
Author :
Gene, Len Foo Eu ; Lee, Neoh Chia ; Tong, Tan Kok ; Sim, Derek
Author_Institution :
Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore
Abstract :
A comparison of the guardring efficiency is done between the epitaxial silicon and bulk silicon for sub-quarter micron technology. The dose optimization and use of ultra high-energy boron buried implanted layer (HBIL) after both pad oxidation and sacrificial oxidation process stage to enhance the guardring efficiency performance of bulk wafers are also investigated. The results and mechanisms leading to such phenomena are discussed.
Keywords :
boron; epitaxial layers; ion implantation; optimisation; oxidation; silicon; substrates; B; Si; bulk silicon; bulk substrate; dose optimization; epitaxial silicon; latchup immunity; pad oxidation; sacrificial oxidation; sub-quarter micron technology; ultra high-energy boron buried implanted layer; Atomic layer deposition; Boron; CMOS technology; Implants; Oxidation; Silicon; Substrates; Switches; Testing; Voltage;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493048
