Title :
Deposition of highly oriented low-stress ZnO films
Author :
Zesch, J.C. ; Hadimioglu, B. ; Khuri-Yakub, B.T. ; Lim, M. ; Lujan, R. ; Ho, J. ; Akamine, S. ; Steinmetz, D. ; Quate, C.F. ; Rawson, E.G.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Abstract :
Several-micron-thick layers of ZnO films were deposited on glass substrates. The films were grown by reactive DC magnetron sputtering from a zinc target. The films are highly oriented, as indicated by X-ray diffraction analysis, and the C-axis of the films is normal to the substrate. A moire deflectometer was built to determine the film stress by measuring the substrate curvature. The films have relatively low stress at higher deposition pressures. The acoustic coupling constant, kt, of the films was measured to be as high as 0.26, which is 90% the value for single-crystal ZnO. The dependence of film quality and stress on various deposition parameters such as pressure and power is presented
Keywords :
II-VI semiconductors; X-ray diffraction examination of materials; electromechanical effects; internal stresses; semiconductor thin films; sputter deposition; zinc compounds; X-ray diffraction; ZnO films; acoustic coupling constant; deposition; electromechanical coupling constant; glass substrates; highly oriented low stress films; power; pressure; quality; reactive DC magnetron sputtering; semiconductor; substrate curvature; Acoustic measurements; Acoustic waves; Argon; Electrodes; Frequency; Gold; Sputtering; Stress measurement; Substrates; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 1991. Proceedings., IEEE 1991
Conference_Location :
Orlando, FL
DOI :
10.1109/ULTSYM.1991.234204
