Deposition of highly oriented low-stress ZnO films

Author

Zesch, J.C. ; Hadimioglu, B. ; Khuri-Yakub, B.T. ; Lim, M. ; Lujan, R. ; Ho, J. ; Akamine, S. ; Steinmetz, D. ; Quate, C.F. ; Rawson, E.G.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

fYear

1991

fDate

8-11 Dec 1991

Firstpage

445

Abstract

Several-micron-thick layers of ZnO films were deposited on glass substrates. The films were grown by reactive DC magnetron sputtering from a zinc target. The films are highly oriented, as indicated by X-ray diffraction analysis, and the C-axis of the films is normal to the substrate. A moire deflectometer was built to determine the film stress by measuring the substrate curvature. The films have relatively low stress at higher deposition pressures. The acoustic coupling constant, k_t, of the films was measured to be as high as 0.26, which is 90% the value for single-crystal ZnO. The dependence of film quality and stress on various deposition parameters such as pressure and power is presented

Keywords

II-VI semiconductors; X-ray diffraction examination of materials; electromechanical effects; internal stresses; semiconductor thin films; sputter deposition; zinc compounds; X-ray diffraction; ZnO films; acoustic coupling constant; deposition; electromechanical coupling constant; glass substrates; highly oriented low stress films; power; pressure; quality; reactive DC magnetron sputtering; semiconductor; substrate curvature; Acoustic measurements; Acoustic waves; Argon; Electrodes; Frequency; Gold; Sputtering; Stress measurement; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1991. Proceedings., IEEE 1991

Conference_Location

Orlando, FL

Type

conf

DOI

10.1109/ULTSYM.1991.234204

Filename

234204