Thermal conductivity studies of a GaN-sapphire structure by combined scanning thermal microscopy and electron backscatter diffraction

Author

Zhang, Y.F. ; Wang, L. ; Ji, Y. ; Han, X.D. ; Zhang, Z. ; Heiderhoff, R. ; Tiedemann, A.K. ; Balk, L.J.

Author_Institution

Inst. of Microstructure & Property of Adv. Mater., Beijing Univ. of Technol., Beijing, China

fYear

2009

fDate

6-10 July 2009

Firstpage

520

Lastpage

522

Abstract

Scanning thermal microscope (SThM) and electron backscatter diffraction (EBSD) techniques were used to investigate the local thermal-conductivity of a GaN-buffer-sapphire heterostructure. Compared with GaN epilayer, buffer layer displayed the low thermal-conductivity and the high strain state due to the lattice distortion.

Keywords

III-V semiconductors; electron backscattering; gallium compounds; sapphire; thermal conductivity; thermal conductivity measurement; wide band gap semiconductors; GaN; combined scanning thermal microscopy; electron backscatter diffraction; lattice distortion; sapphire structure; thermal conductivity studies; Backscatter; Buffer layers; Conductivity measurement; Diffraction; Gallium nitride; Lattices; Light emitting diodes; Scanning electron microscopy; Strain measurement; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232593

Filename

5232593