DocumentCode :
3293696
Title :
A Defect-Free Anodic Oxide Passivation for LSI/FPD Vacuum Chamber
Author :
Kawase, Yasuhiro ; Kitano, Masafumi
Author_Institution :
Mitsubishi Chem. Corp., Kitakyusyu
fYear :
2006
fDate :
25-27 Sept. 2006
Firstpage :
171
Lastpage :
174
Abstract :
Aluminum alloys were anodized in nonaqueous electrolyte solution and surface microroughness of anodic oxide grown on the alloys in nonaqueous electrolyte solution is found by far less than that grown in aqueous electrolyte solution. Barrier type anodic oxides on high-purity Al/Mg/Zr(AlMg2) alloys in nonaqueous solution are found to feature excellent characteristics: no voids or seams are formed, outgas from anodic oxides is very much limited, they feature outstanding resistance to process gases. Anodization of AlMg2 alloys in nonaqueous electrolyte solution will be promising surface passivation of LSI/FPD vacuum equipments.
Keywords :
aluminium alloys; anodes; electrolytes; flat panel displays; large scale integration; magnesium alloys; passivation; surface roughness; zirconium alloys; AlMg2; LSI/FPD vacuum chamber; aluminum alloys; anodization; defect-free anodic oxide passivation; high-purity alloys; nonaqueous electrolyte solution; surface microroughness; surface passivation; Aluminum alloys; Dry etching; Inductors; Large scale integration; Passivation; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-4-9904138-0-4
Type :
conf
DOI :
10.1109/ISSM.2006.4493052
Filename :
4493052
Link To Document :
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