DocumentCode
3293761
Title
The dependence of hot carrier degradation on AC stress waveforms
Author
Cham, Kit M. ; Fu, Horng-Sen ; Nishi, Yoshio
Author_Institution
Hewlett-Packard Co., Palo Alto, CA, USA
fYear
1988
fDate
12-14 Apr 1988
Firstpage
30
Lastpage
33
Abstract
The hot carrier degradation of submicron n-channel FETs is characterized for various gate and drain pulse waveforms. The results are consistent with interface electron traps generated by hot holes. The results showed that inverters with small loads can degrade faster than inverters with large loads, due to AC degradation effects. Device lifetime in circuits cannot in general be projected by DC data. The AC effect was also found to be dependent on device structure
Keywords
hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; AC degradation effects; AC stress waveforms; drain pulse waveforms; gate pulse waveforms; hot carrier degradation; hot holes; interface electron traps; inverters; submicron n-channel FETs; Charge carrier processes; Circuits; Degradation; Electron traps; FETs; Hot carriers; Inverters; Occupational stress; Stress; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/RELPHY.1988.23421
Filename
23421
Link To Document