Title :
The dependence of hot carrier degradation on AC stress waveforms
Author :
Cham, Kit M. ; Fu, Horng-Sen ; Nishi, Yoshio
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
The hot carrier degradation of submicron n-channel FETs is characterized for various gate and drain pulse waveforms. The results are consistent with interface electron traps generated by hot holes. The results showed that inverters with small loads can degrade faster than inverters with large loads, due to AC degradation effects. Device lifetime in circuits cannot in general be projected by DC data. The AC effect was also found to be dependent on device structure
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; reliability; semiconductor device testing; AC degradation effects; AC stress waveforms; drain pulse waveforms; gate pulse waveforms; hot carrier degradation; hot holes; interface electron traps; inverters; submicron n-channel FETs; Charge carrier processes; Circuits; Degradation; Electron traps; FETs; Hot carriers; Inverters; Occupational stress; Stress; Transconductance; Voltage;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23421
