Title :
An on-chip monitor for measuring NBTI degradation of digital circuits
Author :
Zhong, Zheng-Yu ; Cai, Min ; Wang, Qun-Yong ; Li, Na
Author_Institution :
South China Univ. of Technol., Guangzhou, China
Abstract :
NBTI reliability is becoming increasingly important as the CMOS technology scaled down to nanometer regime. It´s necessary to find out approaches to measure the NBTI degradation easy and quickly. In this paper, an on-chip NBTI measurement monitor circuit is presented with purpose of monitor reliability and provide advance warning signs of failure for the chip.
Keywords :
CMOS integrated circuits; digital circuits; integrated circuit measurement; integrated circuit reliability; CMOS technology; digital circuits; nanometer regime; negative-bias temperature instability degradation measurement; on-chip monitor; on-chip negative-bias temperature instability measurement monitor circuit; reliability monitoring; CMOS technology; Degradation; Digital circuits; Hydrogen; MOSFET circuits; Monitoring; Niobium compounds; Semiconductor device measurement; Stress; Titanium compounds;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232605
