Title :
A novel method for determing the lifetime of devices based on process-stress accelerated degradation test
Author :
Chunsheng, Guo ; Yunxia, Bai ; Yuezong, Zhang ; Weidong, Ma ; Shiwei, Feng ; Changzhi, Lv ; Zhiguo, Li
Author_Institution :
Reliability Lab., Beijng Univ. of Technol., Beijing, China
Abstract :
A novel method, which enables rapid determination of lifetime for semiconductor devices, is presented based on progressive-stress accelerated degradation test. Through two steps of acceleration: firstly, using process-stress accelerated test to accelerate the parameter degradation; secondly, using the data of 1~5% degradation to extrapolate the data of 10~50% degradation, this method shortens the test time to dozens or several hundreds of hours. To demonstrate the application of the method, a kind of mature products, Si PNP BJT 3CG120, was tested.
Keywords :
bipolar transistors; semiconductor device testing; PNP BJT; Si; process-stress accelerated degradation test; semiconductor devices; Condition monitoring; Degradation; Electronic equipment testing; Life estimation; Life testing; Semiconductor device testing; Semiconductor devices; Stress; Temperature; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232608
