Title :
A method to evaluate the skew by data dependent gate loading
Author :
Jiang, Yanfeng ; Zhang, Xiaobo ; Yang, Bing ; Ju, Jiaxin
Author_Institution :
Microelectron. Center, North China Univ. of Technol., Beijing, China
Abstract :
In this paper, the skew by data dependent gate loading has been analyzed. A method based on the concept of MOS parametric capacitance has been proposed. According to different data dependent of the MOS transistor, including transient channel charge and Miller effects, the values of capacitance in different data loadings have been extracted. Two clock tree routes have been analyzed by using the gate loading effect. Results revealed that the simulation result including the gate loading approaches to the actual ones closely.
Keywords :
MOSFET; MOS parametric capacitance; MOS transistor; Miller effect; data dependent gate loading; simulation result; transient channel charge; Capacitance; Clocks; Data mining; Delay effects; Instruments; Integrated circuit interconnections; MOSFET circuits; Microelectronics; Temperature dependence; Timing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232609
