Title :
Transient response of bipolar transistor under intense electromagnetic pulse on collector
Author :
Xi Xiaowen ; Chai Changchun ; Ren Xingrong ; Yang Yintang ; Zhang Bing
Author_Institution :
Key Lab. of Minist. of Educ. for Wide Band-Gap, Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
Abstract :
A study on the injection-induced damage to bipolar transistor (BJT) under the intense electromagnetic pulse (EMP) is carried out in this paper. The distribution and variation of the electric field, current density and temperature are obtained and analyzed with the device simulator Medici employed. Simulation results show that when the applied voltage reaches a certain value, there is a conducting tunnel appearing between the collector and the emitter following the avalanche breakdown. Considering both values of the electric field and the current density, it is found that the burnout appears in the N-N+ interface firstly.
Keywords :
avalanche breakdown; bipolar transistors; current density; transient response; BJT; avalanche breakdown; bipolar transistor; current density; device simulator Medici; electric field; intense electromagnetic pulse; transient response; Analytical models; Bipolar transistors; Circuits; Current density; Doping profiles; EMP radiation effects; Medical simulation; Silicon; Temperature distribution; Transient response;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232611
