Title :
Reliability analysis of ESD for novel image sensor with CMOS readout circuit
Author :
Ye, Y. ; Han, J. ; Li, J. ; Zhan, G. ; Zhu, R. ; Guo, F.
Author_Institution :
Key Lab. of the Minist. of Educ. Polarization Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
According to the characterization of a new image sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure, several electrostatic discharge (ESD) protection approaches for readout integrated circuits (ROIC) applied to novel image sensor with state-of-the-art CMOS technology were carefully designed. The results were presented and analyzed in this paper.
Keywords :
CMOS image sensors; electrostatic discharge; integrated circuit design; integrated circuit reliability; readout electronics; semiconductor quantum dots; semiconductor quantum wells; CMOS readout circuit; ESD protection approach; electrostatic discharge; image sensor; integrated circuit design; quantum dots-quantum well hybrid hetero-structure; readout integrated circuits; reliability analysis; state-of-the-art CMOS technology; CMOS image sensors; CMOS integrated circuits; CMOS technology; Electrostatic discharge; Hybrid integrated circuits; Image analysis; Image sensors; Integrated circuit reliability; Protection; Quantum dots;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232613
