The effect of passive component damage of an integrated si bipolar low-noise amplifier under energy-injection

Author

Chai Changchun ; Yang, Yang ; Zhang Bing ; Ding Ruixue ; Leng Peng ; Ren Xingrong

Author_Institution

Key Lab. of Minist. of Educ. for Wide Band-Gap, Xidian Univ., Xi´´an, China

fYear

2009

fDate

6-10 July 2009

Firstpage

402

Lastpage

405

Abstract

Energy injection effect and mechanism of silicon bipolar low noise amplifier (LNA) through the injection of a special signal are experimentally studied in this paper. The experimental results show that the passive resistor is also one of the weaknesses of silicon LNAs in addition to the active device. Based on the low noise design rule of LNA, a wider passive resistor design is particularly useful not only in reducing the noise but also in improving the reliability of LNA whenever possible. Except for the gain characteristics, the experimental results indicate that the noise figure of silicon bipolar LNA is also one of the sensitive parameters to energy injection.

Keywords

low noise amplifiers; passive networks; energy injection; passive component damage; passive resistor; silicon bipolar low noise amplifier; Circuits; Frequency; Low-noise amplifiers; Microelectronics; Noise figure; Noise reduction; Pulse modulation; Resistors; Semiconductor device noise; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232621

Filename

5232621