DocumentCode
3294311
Title
The irradiation effect and failure analysis of DC-DC power converter
Author
He Yujuan ; En YunFei ; Luo Hongwei ; He Xiaoqi
Author_Institution
Res. & Anal. Center, China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China
fYear
2009
fDate
6-10 July 2009
Firstpage
385
Lastpage
387
Abstract
The irradiation response of a DC-DC power converter was studied. During the test, the characteristic parameter of DC-DC power converter such as input current and output voltage increased slowly with empty load, and DC-DC power converter was unsteady and the characteristic parameter was strongly influenced by the total-dose when fully loaded. It was indicated that failure of DC-DC converter was due to the source and drain of VDMOSFET fused together because of over power.
Keywords
DC-DC power convertors; MOSFET; failure analysis; radiation effects; DC-DC power converter; VDMOSFET; failure analysis; irradiation effect; Circuit testing; DC-DC power converters; Failure analysis; Helium; MOSFET circuits; Optical amplifiers; Optical feedback; Power MOSFET; Pulse width modulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232625
Filename
5232625
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