Investigation of post STI liner oxide annealing effect in 0.14μm embedded flash technology

Author

Jin, Li Juan ; You, Young Seon ; Yu, Jin ; Dufrenne, Stephane ; Ho, Eng Keong ; Shukla, Dhruva ; Mukhopadhyay, M. ; Pey, Kin San

Author_Institution

Syst. on Silicon Manuf. Co. Pte. Ltd., Singapore

fYear

2006

fDate

25-27 Sept. 2006

Firstpage

334

Lastpage

336

Abstract

The post STI liner oxide annealing effect for 0.14um embedded flash has been investigated. It is known that STI module is critical process for Vddmin test of logic device. To resolve Vddmin sensitivity, the various experiments have been performed in embedded flash product. Due to complexity of embedded flash product and unique flash operation , the STI etch process has not been considered, which may cause serious flash yield loss. In this paper, it has been known that the post STI liner oxide anneal process plays a role as key process parameters to minimize the Vddmin failure. Besides, it is also proposed it is necessary to find optimum process conditions to maintain stable yield for embedded flash.

Keywords

annealing; flash memories; Vddmin sensitivity; embedded flash technology; post STI liner oxide annealing effect; size 0.14 mum; Annealing; DH-HEMTs; Etching; Flash memory; Furnaces; Logic testing; Low voltage; Split gate flash memory cells; Thermal stresses; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on

Conference_Location

Tokyo

ISSN

1523-553X

Print_ISBN

978-4-9904138-0-4

Type

conf

DOI

10.1109/ISSM.2006.4493099

Filename

4493099