DocumentCode
3294532
Title
Effect of metal routing on the ESD robustness of dual-direction silicon controlled rectifier
Author
Guo, Wei ; Li, Mingliang ; Dong, Shurong
Author_Institution
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
fYear
2009
fDate
6-10 July 2009
Firstpage
336
Lastpage
338
Abstract
Effect of metal routing on the robustness of silicon controlled rectifier (SCR) is studied for bi-direction electrostatic discharge (ESD) protection applications. Depending on the type of metal routing, different failure currents It2 can exist in the positive and negative directions due to the asymmetrical current conductions in the multi-finger dual-direction SCR. Transmission line pulsing (TLP) results are included in support of the analysis.
Keywords
electrostatic discharge; rectifiers; ESD robustness; bi-direction electrostatic discharge protection; dual-direction silicon controlled rectifier; metal routing; multi-finger dual-direction SCR; transmission line pulsing; Anodes; Bidirectional control; Cathodes; Electrostatic discharge; Protection; Robust control; Robustness; Routing; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232637
Filename
5232637
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