• DocumentCode
    3294588
  • Title

    Real-time monitoring of plasma flickering in high pressure electronegative discharge

  • Author

    Kim, Yongjin ; Baek, Kyehyun ; Lee, Samhae ; Lee, Sungno ; Lee, Jaewook ; Jee, Yeonhong ; Kang, Changjin ; Cho, Hanku ; Moon, Jootae

  • Author_Institution
    Samsung Electron. Co., Ltd., Yongin
  • fYear
    2006
  • fDate
    25-27 Sept. 2006
  • Firstpage
    346
  • Lastpage
    349
  • Abstract
    As plasma process is widely used for semiconductor fabrication, various kind of abnormal characteristics of the discharge is observed. In a high pressure discharge with electronegative gas, plasma flickering was observed and it was suspicious to cause a certain type of device failure. To understand the mechanism and to monitor its behavior according to chamber RF time, real-time monitoring using OES has been performed. Also, numerical algorithms to evaluate the degree of flickering was proposed and confirmed to be useful for monitoring wafer to wafer variation of the plasma status. A probable mechanism based on the electronegative discharge characteristics, was suggested and the plasma stability could be improved by following guidelines which was suggested through the understanding of the mechanism.
  • Keywords
    discharges (electric); integrated circuit technology; sputter etching; device failure; electronegative gas; high pressure electronegative discharge; plasma flickering; plasma process; real-time monitoring; semiconductor fabrication; Argon; Condition monitoring; Electrons; Hydrogen; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Plasma stability; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-4-9904138-0-4
  • Type

    conf

  • DOI
    10.1109/ISSM.2006.4493103
  • Filename
    4493103