Title :
Low-K CMP process control by using interpolation method
Author :
Kato, Shigeki ; Uto, Mitsuyoshi
Author_Institution :
NEC Fabserve, Ltd., Sagamihara
Abstract :
For ILD CMP process, accurate polish time control is required to obtain expected film thickness. Comparisons between conventional SiO2 CMP process and low-k CMP process were studied and realized polishing time for low-k material can not be determined by only removal rate due to the existence of incubation time at first stage. Interpolation method was evaluated to determine polishing time for low-k CMP process. Correction of this incubation time was performed by using interpolation method and promising results were obtained.
Keywords :
chemical mechanical polishing; interpolation; low-k dielectric thin films; process control; film thickness; interpolation method; low-k CMP process control; low-k material; polish time control; Chemical industry; Chemical technology; Dielectric materials; Electronics industry; Interpolation; Monitoring; Process control; Semiconductor films; Semiconductor materials; Thickness control;
Conference_Titel :
Semiconductor Manufacturing, 2006. ISSM 2006. IEEE International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-4-9904138-0-4
DOI :
10.1109/ISSM.2006.4493105
