DocumentCode :
3294673
Title :
In-situ film thickness and temperature monitoring using a 2 GHz acoustic phase measurement system
Author :
Bhardwaj, S. ; Mohan, S.S. ; Drozd, R.J. ; Khuri-Yakub, B.T. ; Saraswat, K.C.
Author_Institution :
Stanford Univ., CA, USA
fYear :
1991
fDate :
8-11 Dec 1991
Firstpage :
965
Abstract :
A 2 GHz acoustic phase measurement system has been developed and used for in-situ monitoring of thin film thickness and temperature in silicon wafer processing. Initial evaporation experiments in a vacuum station have shown a film thickness resolution of ~1000 Å with a potential resolution to ~1 Å. The potential of this system for making temperature measurements has also been explored, and initial experiments in an oven have shown a temperature resolution of 0.01 K
Keywords :
process control; semiconductor technology; temperature control; temperature measurement; thickness control; thickness measurement; ultrasonic applications; vacuum deposition; 2 GHz; In films; Si wafer processing; acoustic phase measurement system; in-situ monitoring; process monitoring; temperature measurements; temperature monitoring; thin film thickness; vacuum evaporation; Acoustic transducers; Impedance; Monitoring; Optical films; Phase measurement; Piezoelectric transducers; Semiconductor films; Temperature measurement; Temperature sensors; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1991. Proceedings., IEEE 1991
Conference_Location :
Orlando, FL
Type :
conf
DOI :
10.1109/ULTSYM.1991.234258
Filename :
234258
Link To Document :
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