In-situ film thickness and temperature monitoring using a 2 GHz acoustic phase measurement system

Author

Bhardwaj, S. ; Mohan, S.S. ; Drozd, R.J. ; Khuri-Yakub, B.T. ; Saraswat, K.C.

Author_Institution

Stanford Univ., CA, USA

fYear

1991

fDate

8-11 Dec 1991

Firstpage

965

Abstract

A 2 GHz acoustic phase measurement system has been developed and used for in-situ monitoring of thin film thickness and temperature in silicon wafer processing. Initial evaporation experiments in a vacuum station have shown a film thickness resolution of ~1000 Å with a potential resolution to ~1 Å. The potential of this system for making temperature measurements has also been explored, and initial experiments in an oven have shown a temperature resolution of 0.01 K

Keywords

process control; semiconductor technology; temperature control; temperature measurement; thickness control; thickness measurement; ultrasonic applications; vacuum deposition; 2 GHz; In films; Si wafer processing; acoustic phase measurement system; in-situ monitoring; process monitoring; temperature measurements; temperature monitoring; thin film thickness; vacuum evaporation; Acoustic transducers; Impedance; Monitoring; Optical films; Phase measurement; Piezoelectric transducers; Semiconductor films; Temperature measurement; Temperature sensors; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1991. Proceedings., IEEE 1991

Conference_Location

Orlando, FL

Type

conf

DOI

10.1109/ULTSYM.1991.234258

Filename

234258