Title :
Reliability of high power QCW cm-bar arrays
Author :
Guoguang, Lu ; Yun, Huang ; Yunfei, En ; Shaohua, Yang ; Zhifeng, Lei
Author_Institution :
Key Lab. for Reliability Phys. & Applic. Technol. of Electr. Component, China Electron. Product Reliability & Environ. Testing Res. Inst., Guangzhou, China
Abstract :
We report here the lifetime testing of 10 high power cm-bar arrays using an automated diode array reliability experiment. The devices are tested at 25degC/100A, with a pulse width of 200 mus and a duty factor of 2%. Most devices survive more than 1.0times109 shots. Failure analysis results on the few failing devices reveal failure modes of mechanical stress, chemical contamination and thermal migration.
Keywords :
life testing; semiconductor device reliability; semiconductor laser arrays; automated diode array reliability experiment; chemical contamination; high power QCW cm-bar arrays; lifetime testing; mechanical stress; thermal migration; Aging; Automatic testing; Diode lasers; Failure analysis; Life estimation; Life testing; Optical arrays; Power lasers; Semiconductor laser arrays; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232648
