Ultra-high-speed hybrid silicon devices and applications

Summary form only given. We propose a step-structure hybrid Plasmon waveguide consisting of polymer sandwiched between silicon and metal layers. The metal step provides an additional degree of freedom to control the conductor-gap-dielectric (CGD) mode to tune the trade-off mode confinement against attenuation. Under optimal configurations, mode size decreases to a few nanometres and the loss reduces to ten percent of that of conventional Ag/silicon surface Plasmon. Due to the ultra strong mode confinement and high nonlinear polymer as the gap layer, the achieved nonlinearity is 3 orders larger than that of conventional silicon waveguide. By using the high nonlinearity of the device, system applications can be explored such as parametric amplifier and high speed time de multiplexer.