Reliable High Volt Mixed Signal IC Manufacturing

Systematic variations of standard n-channel field dopant concentrations and diffusion to well layout rules have been an industry standard for building LDMOS devices. Using this systematic approach, the determined BV can be customized for a given circuit need. This LDMOS can also be used to trigger a custom ESD protection structure. Structures without gate oxide further enhance their reliability during multiple ESD events. Arranging these structures in a radially symmetric array with centralized bond pads provide space efficient protection for multiple voltage domains, improved signal isolation, electromagnetic compatibility, and Vt1 immunity to process variation. T-cad simulations can be used to determine these layout rules prior to actual silicon.