Title :
IEEE recommended practice for powering and grounding electronic equipment. (Color Book Series - Emerald Book)
Author :
da Costa Gouveia-Filho, Oscar ; Schneider, Marcio Cherem ; Galup-Montoro, Carlos
Author_Institution :
Dept. de Engenharia Eletrica, UFSC, Sao Carlos, Brazil
Abstract :
This paper presents a new compact model for the intrinsic charges and (trans) capacitances of the MOSFET including short-channel effects such as drain induced barrier lowering (DIBL), channel length modulation (CLM) and carrier velocity saturation. Explicit and compact expressions for charges and (trans) capacitances valid in all regimes of operation are presented. Simulations examples that illustrate short-channel effects in charges and (trans) capacitances are shown
Keywords :
MOSFET; capacitance; carrier mobility; semiconductor device models; surface potential; carrier velocity saturation; channel length modulation; compact model; drain induced barrier lowering; intrinsic charges; short-channel MOS transistors; transcapacitances; Digital circuits; Electrical capacitance tomography; Equations; Geometry; Instruments; Low voltage; MOSFET circuits; Postal services; Rain; Solid modeling;
Conference_Titel :
Integrated Circuits and Systems Design, 1999. Proceedings. XII Symposium on
Conference_Location :
Natal
Print_ISBN :
0-7695-0387-X
DOI :
10.1109/SBCCI.1999.802959
