Title :
Fabrication of Polycrystalline 3C-SiC Microstructures
Author :
Ohn, Chang-Min ; Lee, Jong-Hwa ; Chung, Gwiy-Sang
Author_Institution :
Univ. of Ulsan, Ulsan
fDate :
June 1 2007-July 5 2007
Abstract :
Magnetron reactive ion etching (RIE) characteristic of polycrystalline (poly) 3C-SiC thin films grown on thermally oxidized Si substrates are presented. The magnetron RIE can stably etch the poly 3C-SiC thin films at a lower ion energy (70 W) without any damages than the commercial RIE system. The best vertical structure was improved by the addition of 40% O2 and 16% Ar with the CHF3 reactive gas.
Keywords :
crystal microstructure; semiconductor growth; semiconductor thin films; silicon compounds; sputter etching; wide band gap semiconductors; 3C-SiC thin films; Si; Si surface; SiC; SiC interface; magnetron reactive ion etching; polycrystalline microstructures; polycrystalline thin films; power 70 W; reactive gas; silicon substrates; thermal oxidization; Argon; Etching; Fabrication; Microstructure; Radio frequency; Saturation magnetization; Semiconductor thin films; Silicon carbide; Sputtering; Substrates; CHF3; M/NEMS; Polycrystalline 3C-SiC; RIE;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292896
