DocumentCode
3295081
Title
The study of sensitive circuit and layout for CDM improvement
Author
Lee, Jian-Hsing ; Shih, J.R. ; Guo, Shawn ; Yang, Dao-Hong ; Chen, Jone F. ; Su, David ; Wu, Kenneth
Author_Institution
Taiwan Semicond. Manuf. Co., Taiwan
fYear
2009
fDate
6-10 July 2009
Firstpage
228
Lastpage
232
Abstract
The influence of the internal circuit layout on the chip CDM performance is reported in this paper. It is found that the well pick-up has great impact on the chip CDM performance. The well pick-up can sink the CDM current into the P-Well and induce the non-uniform current to stress the device. This paper also verifies that the bus-line capacitors are more important than the package capacitor for chip CDM since the well pick-up only can affect the current coming from bus line capacitors, but cannot affect the current coming from the package capacitor. Moreover, putting the circuit and ESD protection device in the deep-NWell to isolate the circuit from the P-substrate and using the long contact-to-contact space for ESD protection device also can get the better CDM performance.
Keywords
electrostatic discharge; integrated circuit layout; integrated circuit testing; CDM improvement; ESD protection device; bus-line capacitors; sensitive circuit and layout; Capacitance; Capacitors; Circuit testing; Electrostatic discharge; Failure analysis; Packaging; Protection; RLC circuits; Stress; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232664
Filename
5232664
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