• DocumentCode
    3295081
  • Title

    The study of sensitive circuit and layout for CDM improvement

  • Author

    Lee, Jian-Hsing ; Shih, J.R. ; Guo, Shawn ; Yang, Dao-Hong ; Chen, Jone F. ; Su, David ; Wu, Kenneth

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Taiwan
  • fYear
    2009
  • fDate
    6-10 July 2009
  • Firstpage
    228
  • Lastpage
    232
  • Abstract
    The influence of the internal circuit layout on the chip CDM performance is reported in this paper. It is found that the well pick-up has great impact on the chip CDM performance. The well pick-up can sink the CDM current into the P-Well and induce the non-uniform current to stress the device. This paper also verifies that the bus-line capacitors are more important than the package capacitor for chip CDM since the well pick-up only can affect the current coming from bus line capacitors, but cannot affect the current coming from the package capacitor. Moreover, putting the circuit and ESD protection device in the deep-NWell to isolate the circuit from the P-substrate and using the long contact-to-contact space for ESD protection device also can get the better CDM performance.
  • Keywords
    electrostatic discharge; integrated circuit layout; integrated circuit testing; CDM improvement; ESD protection device; bus-line capacitors; sensitive circuit and layout; Capacitance; Capacitors; Circuit testing; Electrostatic discharge; Failure analysis; Packaging; Protection; RLC circuits; Stress; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
  • Conference_Location
    Suzhou, Jiangsu
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-3911-9
  • Electronic_ISBN
    1946-1542
  • Type

    conf

  • DOI
    10.1109/IPFA.2009.5232664
  • Filename
    5232664