Electrical Characteristics of Polycrystalline 3C-SiC Grown on A1N Buffer Layer

Author

Kim, Kang-San ; Chung, Gwiy-Sang

Author_Institution

Univ. of Ulsan, Ulsan

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

30

Lastpage

31

Abstract

This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO₂ and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and Hall effect.

Keywords

Fourier transform spectra; Hall effect; X-ray photoelectron spectra; buffer layers; chemical vapour deposition; electron mobility; infrared spectra; semiconductor thin films; silicon compounds; wide band gap semiconductors; 3C-SiC; AlN surface; Fourier transform infrared spectroscopy; Hall effect; SiO₂ surface; X-ray photoelectron spectra; bonding structure; buffer layers; chemical vapor depostion; crystallinity; electron mobility; polycrystalline thin films; surface chemical composition; Argon; Bonding; Buffer layers; Electric variables; Inductors; Silicon carbide; Substrates; Temperature; Thermal conductivity; Thermal stresses; AIN; APCVD; Poly 3C-SiC; SiO2; buffer layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292898

Filename

4292898