Title :
Electrical Characteristics of Polycrystalline 3C-SiC Grown on A1N Buffer Layer
Author :
Kim, Kang-San ; Chung, Gwiy-Sang
Author_Institution :
Univ. of Ulsan, Ulsan
fDate :
June 1 2007-July 5 2007
Abstract :
This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and Hall effect.
Keywords :
Fourier transform spectra; Hall effect; X-ray photoelectron spectra; buffer layers; chemical vapour deposition; electron mobility; infrared spectra; semiconductor thin films; silicon compounds; wide band gap semiconductors; 3C-SiC; AlN surface; Fourier transform infrared spectroscopy; Hall effect; SiO2 surface; X-ray photoelectron spectra; bonding structure; buffer layers; chemical vapor depostion; crystallinity; electron mobility; polycrystalline thin films; surface chemical composition; Argon; Bonding; Buffer layers; Electric variables; Inductors; Silicon carbide; Substrates; Temperature; Thermal conductivity; Thermal stresses; AIN; APCVD; Poly 3C-SiC; SiO2; buffer layer;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292898
