DocumentCode :
3295117
Title :
THB reliability research for fine pitch substrate
Author :
Feng, Weiwei ; Zhou, Jianwei ; Fu, Xingming ; Wang, Qian ; Lee, Jaisung
Author_Institution :
Samsung Semicond. (China) R&D Co., Ltd., Suzhou, China
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
219
Lastpage :
223
Abstract :
With plating bar pitch becoming finer, the risk of ion migration on package surface under temperature humidity bias (THB) tests will be raised. In our research on fine pitch products with operating voltages of 1.5 V, 1.8 V and 3.3 V, the effects of plating bar spacing and layout that may affect ion migration on the package surface in THB tests have been studied. The critical substrate plating bar spacing and bias values that cause ion migration have been determined. The effects of different PSR (green PSR and non-green PSR) on the ion migration phenomenon have also been evaluated. Static electric field simulations have been done to help analyze the effects of different plating bar layouts. A substrate design rule for fine pitch products has been established for improving THB reliability.
Keywords :
packaging; reliability; THB reliability research; THB test; fine pitch substrate; ion migration; package surface; plating bar layouts; plating bar pitch; static electric field simulation; temperature humidity bias; voltage 1.5 V to 3.3 V; Circuit testing; Failure analysis; Humidity; Packaging; Research and development; Semiconductor device reliability; Sockets; Substrates; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232666
Filename :
5232666
Link To Document :
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