High-temperature Conductive-AFM technique for resolution of soft failures

This paper demonstrates the Veeco heating stage for high temperature Conductive-AFM analysis which is very useful for revealing leaky contacts associated with soft failures. CAFM at 80degC is performed on SOI transistors to isolate leaky polysilicon gate contacts. Nanoprobing at high temperature is performed and it shows strong correlation with the high temperature CAFM data. High temperature CAFM helped to isolate higher gate oxide leakage current in the failing transistor in SRAM memory cell.