DocumentCode :
3295206
Title :
Bond pad structure reliability
Author :
Ching, Teo Boon ; Schroen, Walter H.
fYear :
1988
fDate :
12-14 Apr 1988
Firstpage :
64
Lastpage :
70
Abstract :
Bond pads typically have oxides below the metallization which act to insulate the pads from the substrate. These oxides are grown or deposited as part of the primary front-end process of the device. Different oxides are seen to have varying tolerance to the associated mechanical loading and ultrasonic scrubbing, resulting in bond pad cracking. The front-end process can thus influence bond quality. A study was done to characterize various oxides and also different metal systems consisting of aluminum and titanium tungsten alloy. The proper choice of metallization was found to give significant improvement in tolerance of bond-process-induced stresses
Keywords :
integrated circuit technology; lead bonding; metallisation; packaging; reliability; Al; TiW; bond pad structure reliability; bond-process-induced stresses; cracking; mechanical loading; metallization; oxides; ultrasonic scrubbing; Aluminum; Aluminum alloys; Atherosclerosis; Bonding; Bonding forces; Instruments; Insulation; Metallization; Silicon; Stress; Temperature; Testing; Thermal stresses; Titanium alloys; Tungsten; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/RELPHY.1988.23428
Filename :
23428
Link To Document :
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