Fabrication of GaAs/InGaAs Micro- and Nano- Tubes by Means of Scanning Probe Lithography

The aim of this work was to fabricate, by means of scanning probe lithography, semiconductor micro- and nanotubes from strained GaAs/InGaAs- based film heterostructures. Using scanning probe lithography, micro- and nanotubes were obtained. It was shown possible to oxidize structures thicker than 100 nm through their entire thickness using local anodic oxidation. An advantage of local anodic oxidation is that this technique requires no resist to be used, leaving microstructures formed at previous process stages intact and therefore allowing repeated lithographic steps to be performed on one structure.