Surface Recombination and Charge Carriers Generation by Radiations in MBE p-HgCdTe Films with Graded-Gap Near-Border Layers

Author

Protasov, Dmitry D. ; Kostuchenko, Vladimir Ya

Author_Institution

RAS, Novosibirsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

54

Lastpage

57

Abstract

The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction x_Cd is increased from central party of structures to its borders. It was obtained, that the multilayers structure can be reduced to homogeneous film by using of effective surface recombination velocities and surface generation rate.

Keywords

II-VI semiconductors; cadmium compounds; electron gas; mercury compounds; molecular beam epitaxial growth; semiconductor superlattices; semiconductor thin films; surface recombination; HgCdTe; MBE; charge carriers generation; electron holes gas; graded-gap layers; homogeneous film; multilayers structures; near-border layers; radiations; surface recombination; Absorption; Charge carrier processes; Charge carriers; Conductivity; Electron mobility; Equations; Magnetic fields; Magnetic films; Molecular beam epitaxial growth; Radiative recombination; graded-gap structures; mercury-cadmium-telluride; surface recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292906

Filename

4292906