Title :
Surface Recombination and Charge Carriers Generation by Radiations in MBE p-HgCdTe Films with Graded-Gap Near-Border Layers
Author :
Protasov, Dmitry D. ; Kostuchenko, Vladimir Ya
Author_Institution :
RAS, Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
The behavior of excess electron-holes gas in crossed electric and magnetic fields in multilayers structures p-HgCdTe with graded-gap near-border layers is described. In near-border layers a cadmium mole fraction xCd is increased from central party of structures to its borders. It was obtained, that the multilayers structure can be reduced to homogeneous film by using of effective surface recombination velocities and surface generation rate.
Keywords :
II-VI semiconductors; cadmium compounds; electron gas; mercury compounds; molecular beam epitaxial growth; semiconductor superlattices; semiconductor thin films; surface recombination; HgCdTe; MBE; charge carriers generation; electron holes gas; graded-gap layers; homogeneous film; multilayers structures; near-border layers; radiations; surface recombination; Absorption; Charge carrier processes; Charge carriers; Conductivity; Electron mobility; Equations; Magnetic fields; Magnetic films; Molecular beam epitaxial growth; Radiative recombination; graded-gap structures; mercury-cadmium-telluride; surface recombination;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292906
